Product overview
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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All features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.55 V (typ.) at IC = 30 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
All tools & software
All resources
| Resource title | Version | Latest update |
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Product Specifications (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 7.0 | 18 Mar 2021 | 18 Mar 2021 |
Application Notes (4)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 31 Oct 2024 | 31 Oct 2024 | ||
| 1.1 | 31 Oct 2024 | 31 Oct 2024 | ||
| 1.0 | 31 Oct 2024 | 31 Oct 2024 | ||
| 1.0 | 31 Oct 2024 | 31 Oct 2024 |
Technical Notes & Articles (3)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 19 Nov 2021 | 19 Nov 2021 | ||
| 2.4 | 11 Jul 2023 | 11 Jul 2023 | ||
| 2.0 | 23 Nov 2023 | 23 Nov 2023 |
Flyers (5)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 07 Jul 2020 | 07 Jul 2020 | ||
| 1.0 | 27 Jan 2023 | 27 Jan 2023 | ||
| 1.0 | 13 Nov 2020 | 13 Nov 2020 | ||
| 1.0 | 04 May 2020 | 04 May 2020 | ||
| 1.0 | 16 Dec 2024 | 16 Dec 2024 |
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGW30H65FB
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Symbols
Footprints
3D models
All resources
| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGW30H65FB | Active | Trench gate field-stop 650 V, 30 A high speed HB series IGBT | TO-247 | Industrial | Ecopack2 | |
STGW30H65FB
Package:
Trench gate field-stop 650 V, 30 A high speed HB series IGBTMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||||||||
| STGW30H65FB | | | distributors No availability of distributors reported, please contact our sales office |
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STGW30H65FB Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors