Product overview
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
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All features
- Integrated antiparallel collector-emitter diode
- Minimum lot-to-lot spread for reliable operation
- High voltage capability
- Very high switching speed
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STT13005D
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