Product overview
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
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All features
- High voltage capability
- Minimum lot-to-lot spread for reliable operation
- Low spread of dynamic parameters
- Very high switching speed
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STX13005
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