MJD127

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Design Win

Low voltage PNP power Darlington transistor

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Product overview

Description

The devices are manufactured in planar technology with \"base island\" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

  • All features

    • Low collector-emitter saturation voltage
    • Integrated antiparallel collector-emitter diode

EDA Symbols, Footprints and 3D Models

STMicroelectronics - MJD127

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
MJD127T4
Active
DPAK Industrial Ecopack2

MJD127T4

Package:

DPAK

Material Declaration**:

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Marketing Status

Active

Package

DPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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MJD127T4
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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors