STI4N62K3

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Design Win

N-channel 620 V, 1.7 Ohm typ., 3.8 A, MDmesh K3 Power MOSFET in an I2PAK package

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Product overview

Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.

  • All features

    • 100% avalanche tested
    • Extremely high dv/dt capability
    • Gate charge minimized
    • Very low intrinsic capacitance
    • Improved diode reverse recovery characteristics
    • Zener-protected

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STI4N62K3

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STI4N62K3
Active
I2PAK Industrial Ecopack2

STI4N62K3

Package:

I2PAK

Material Declaration**:

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Marketing Status

Active

Package

I2PAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors