STW9N150

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Design Win

N-channel 1500 V, 1.8 Ohm typ., 8 A PowerMESH Power MOSFET in a TO-247 package

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Product overview

Description

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

  • All features

    • Very low on-resistance
    • 100% avalanche tested
    • Gate charge minimized
    • Avalanche ruggedness
    • High speed switching
    • Very low intrinsic capacitances

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STW9N150

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STW9N150
Active
TO-247 Industrial Ecopack2

STW9N150

Package:

TO-247

Material Declaration**:

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Marketing Status

Active

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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