Product overview
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).
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All features
- High input impedance (voltage driven)
- Off losses include tail current
- Low on-voltage drop (Vcesat)
- High current capability
- Low gate charge
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EDA Symbols, Footprints and 3D Models
Quality and Reliability
Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STGE200NB60S | Active | N-channel 600 V, 150 A, low drop IGBT | ISOTOP | Industrial | Ecopack2 | |
STGE200NB60S
Package:
N-channel 600 V, 150 A, low drop IGBTMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
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min | max | ||||||||||||||
STGE200NB60S | | | distributors No availability of distributors reported, please contact our sales office |
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STGE200NB60S Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors