Product overview
Description
These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.
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All features
- Low on-voltage drop (VCE(sat))
- Off losses include tail current
- Losses include diode recovery energy
- High frequency operation up to 70 kHz
- Very soft ultra fast recovery anti parallel diode
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGF7NC60HD
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