SGT65R65AL
650 V, 49 mΩ typ., 25 A, e-mode
PowerGaN transistor
 

• Enhancement mode normally off transistor
• Very high switching speed
• High power management capability
  
   

• Extremely low capacitances
• Kelvin source pad for optimum gate driving
• Zero reverse recovery charge
   

PowerGaN is here!
Product video

STPower GaN transistors are highly efficient transistors based on gallium nitride (GaN), a relatively new wide bandgap compound that provides real added value in power conversion solutions, including higher efficiency and power density. 

ST begins volume production of PowerGaN devices for slimmer, cooler, and more efficient power products
Press announcement

STMicroelectronics has begun volume production of e-mode PowerGaN HEMT (high-electron-mobility transistor) devices that simplify the design of high-efficiency power-conversion systems. The STPOWER™ GaN transistors raise performance in applications such as wall adapters, chargers, lighting systems, industrial power supplies, renewable energy applications, and in automotive electrification...

E-mode GaN technology: tips for best driving
Application note

The major challenge of power electronics today is to deal with the growing need for power and efficiency improvements and at the same time, the constant pursuit of cost and size reduction. The introduction of wide band gap materials (WBG) devices moves in this direction, thanks to their electrical features and considering that Si devices have achieved their theoretical limits with the increased switching frequency.

Gallium nitride (GaN): the future of power electronics
Product presentation

The major challenge of power electronics today is dealing with the growing need for improved efficiency and power performance and at the same time, the constant pursuit of cost and size reductions. The introduction of Gallium Nitride (GaN) technology moves in this direction and, as it becomes increasingly available commercially, its use in power conversion applications is growing. 

Probing considerations for PowerGaN transistors
Application note

This application note provides complete user-focused guidelines to accurately measure the main electrical signals across a GaN power transistor.

Benefits of using ST wide-bandgap technology
Whitepaper

Deep dive into the application types and conditions where wide-bandgap devices offer better performance and cost-effectiveness than silicon devices.