Up to 1200 V automotive-grade SiC MOSFETs in an SMD package with top-side cooling
A new 750 V SiC MOSFET in our HU3PAK package
Improved efficiency and thermal performance for more compact and reliable power conversion systems
Improved efficiency and thermal performance for more compact and reliable power conversion systems
With a breakdown voltage up to 1200 V, these AEC-Q101 qualified devices combine the intrinsic features of ST's 3rd-generation of silicon-carbide STPOWER technology with the excellent thermal performance of the SMD package with top-side cooling (HU3PAK). Energy efficiency, system size and weight are improved for a smaller form factor and enhanced performance.
What the STPOWER SiC MOSFETs offer
Thermal performance
- SMD package with top-side cooling
Power efficiency
- Very low RDS(on) over the entire temperature range
- Very low switching losses
Switching performance
- High-speed switching performance
- Source sensing pin
Easier design
- Very fast and robust intrinsic body diode
Automotive qualification
- AEC-Q101 qualified
| 650 V series | 750 V series | 1200 V series |
|---|---|---|---|
| Breakdown voltage (VDS) | 650 V | 750 V | 1200 V |
| On-state resistance (max) | 63 mΩ , 72 mΩ | 78 mΩ | 28 mΩ , 87 mΩ |
| Drain current | 30 A | 30 A | 30 A , 100 A |
| Product references |
What the STPOWER SiC MOSFETs offer
Key applications
On Board Charger
DC/DC Converter
EV Charging
Solar
Recommended resources
SiC MOSFETs with new top-side cooling HU3PAK package for enhanced power density
SiC MOSFETs with new top-side cooling HU3PAK package for enhanced power density
On-demand webinar
Watch our on-demand webinar to learn how ST’s third generation of silicon-carbide MOSFETs with our new top-side cooling HU3PAK package can take your designs to the next level.
New testing platform for SiC MOSFETs in an HU3PAK package with top-side cooling
New testing platform for SiC MOSFETs in an HU3PAK package with top-side cooling
On-demand webinar
In this webinar, we will look closely at different test methods and approaches (double pulse tests, application tests, thermal tests, etc.). In addition to a description of the test platform based on the STDES-SICGPHU3 reference design, our team will provide useful tips on benchmarking power devices to correctly determine SiC performance with real-life use case measurements.
3rd-gen SiC MOSFETs for higher efficiency in next-generation electric vehicle applications
3rd-gen SiC MOSFETs for higher efficiency in next-generation electric vehicle applications
Flyer
3rd-gen SiC MOSFETs feature very low RDS(on) and ensure an extended mileage range, optimized systems size and weight for electric vehicles. Our comprehensive portfolio covers a broad breakdown voltage range up to 1200 V. Devices are offered in state-of-the-art packages designed to meet the highest automotive and industrial standards.
HU3PAK package mounting guidelines and considerations for the best thermal performance
HU3PAK package mounting guidelines and considerations for the best thermal performance
Technical note
This note provide guidelines for package mounting, handling and soldering, as well as thermal considerations linked to heat sink types and assembly methods. It provides information on how to limit the chip's temperature by managing the heat transfer between the chip and the ambient atmosphere to ensure the correct performance of a component and to avoid failure.
Silicon carbide for a more sustainable future
SiC devices allow smaller and lighter power designs featuring higher power density