Up to 1200 V automotive-grade SiC MOSFETs in an SMD package with top-side cooling

3rd-gen SiC MOSFET in our HU3PAK package

Improved efficiency and thermal performance for more compact and reliable power conversion systems

Improved efficiency and thermal performance for more compact and reliable power conversion systems

With a breakdown voltage up to 1200 V, these AEC-Q101 qualified devices combine the intrinsic features of ST's 3rd-generation of silicon-carbide STPOWER technology with the excellent thermal performance of the SMD package with top-side cooling (HU3PAK).
Energy efficiency, system size and weight are improved for a smaller form factor and enhanced performance.

On-board chargers

DC/DC converters

EV charging

Solar

What the STPOWER SiC MOSFETs offer

  • Thermal performance
    • SMD package with top-side cooling
  • Power efficiency
    • Very low RDS(on) over the entire temperature range
    • Very low switching losses
  • Switching performance
    • High-speed switching performance
    • Source sensing pin
  • Easier design
    • Very fast and robust intrinsic body diode
  • Automotive qualification
    • AEC-Q101 qualified

 

650 V series
in HU3PAK

750 V series
in HU3PAK

1200 V series
in HU3PAK

Breakdown voltage (VDS)

650 V

750 V

1200 V

On-state resistance (max)

21 mΩ to 72 mΩ

 

15 mΩ , 78 mΩ

26 mΩ to 87 mΩ

Drain current
(max)

30 A to 110 A

30 A, 110 A

30 A to 90 A

Start your design

Get samples

Get samples

Get samples

Webinar

SiC MOSFETs with new top-side cooling HU3PAK package for enhanced power density

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