STMicroelectronics Introduces micro-Ohm Power MOSFET to Boost Efficiency in Paralleled Server Power Supplies

Latest technology achieves industry’s lowest Rds(on) to benefit MOSFET OR-ing applications Geneva / 30 Nov 2007

ST has developed an innovative ribbon-bonding technology that delivers a low typical Rds(on) of 800 micro-Ohms (0.8-mOhm), setting a new industry bench­mark for high-current MOSFETs. The 20V device, which is also ideal for reducing secondary rectification losses in high-efficiency DC‑DC converters, provides excellent protection under short-circuit conditions, with a very low turn-off time.

Paralleling of power supplies is frequently used to provide redundancy in critical systems or to increase capacity. Originally, diodes were used for this function, but they have been replaced by MOSFETs to achieve higher performance. Now, the very low losses of the STV300NH02L deliver a further significant step forward in power-supply efficiency.

The STV300NH02L is available now in a PowerSO-10 package, priced at $4.50 in quantities of 1000 pieces.

Further information is available at www.st.com/pmos.

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About STMicroelectronics
STMicroelectronics is a global leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivalled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence markets. The Company's shares are traded on the New York Stock Exchange, on Euronext Paris and on the Milan Stock Exchange. In 2006, the Company's net revenues were $9.85 billion and net earnings were $782 million. Further information on ST can be found at www.st.com.
Information last updated Jan 2007