First 650 V super-junction power MOSFET in SMD TO-LL package for an optimum trade-off between conduction and switching loss
The new 650 V MDmesh DM6 STPOWER MOSFET combines an extremely high dv/dt capability and improved intrinsic diode reverse recovery time with the additional Kelvin pin of the leadless package for higher system efficiency in the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Key features of STO68N65DM6
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- Extremely high dv/dt ruggedness
- Excellent switching performance thanks to the extra driving source pin
Application example
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MDmesh™ DM6: the latest fast-recovery diode MOSFET series of ST's super-junction power MOSFET portfolio
Today's reference for full and half bridge topologies, our MDmesh DM6 series offers an optimized capacity profile and a life-long killing process that results in a low gate charge (Qg), very low recovery charge (Qrr), and a low recovery time (trr) as well as an excellent improvement of the RDS(on) per area.
This new fast-recovery diode MOSFET series turns its gaze towards new scenarios aiming at greater efficiency and very impressive power density for super robust power conversion topologies.
STPOWER MOSFET finder mobile app
The STPOWER MOSFET finder mobile app is a user-friendly way to search our product portfolio, offering a smooth and simple navigation experience. The parametric search engine allows the user to rapidly identify the right product that best fits your application. Available on Google Play, App Store and Wandoujia.
Super-junction MOSFETs in the innovative TO-LL SMD power packages
Discover the advantages of our new space-saving and thermally efficient leadless package.
