STW75N65DM6-4: This high-voltage N-channel Power MOSFET offers one of the most effective switching behaviors available on the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters
Compared with the previous generation of MDmesh fast-recovery diode series, the DM6 series combines very low recovery charge (Qrr), recovery time (trr) and a greatly improved RDS(on) per area with one of the most effective switching behaviors available on the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Key features of STW75N65DM6-4
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
- Excellent switching performance thanks to the extra driving source pin
Application examples
Recommended resources
Discover our wide portfolio of power and energy management ICs and how they can help your designs.
A user-friendly product selector ensuring a smooth and simple navigation experience with a parametric search engine that lets you rapidly identify the appropriate MOSFET that best fits your application. Available on Google Play, App Store and Wandoujia.
How to get the most out of our MDmesh DM6 super-junction technology with fast recovery diode for your designs
Advantages of using an additional driver source pin in discrete Power MOSFETs