FERD30H100S - 100 V, 30 A Field-Effect Rectifier Diode (FERD) - STMicroelectronics

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Product overview

Description

The device is based on a proprietary technology that achieves the best in class V_F/I_R trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. With a lower dependency of leakage current (I_R) and forward voltage (V_F) in function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers.

All features
ST advanced rectifier process

Stable leakage current over reverse voltage

Reduced leakage current

Low forward voltage drop

High frequency operation
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	Resource title	Version	Latest update

SPICE models (1)

	Resource title	Version	Latest update
ZIP	Field Effect Rectifier diodes PSpice models (.lib & .olb)	7.0	07 Dec 2021	07 Dec 2021 Field Effect Rectifier diodes PSpice models (.lib & .olb) 7.0

Quality and Reliability

Part Number	Marketing Status	Package	Grade	RoHS Compliance Grade	Material Declaration**
FERD30H100S	Proposal	TO 252 DPAK	Industrial	-
FERD30H100SB-TR	Active	DPAK	Industrial	Ecopack2	PDF XML
FERD30H100STS	Active	TO-220AB	Industrial	Ecopack2	PDF XML

FERD30H100S

Package:

TO 252 DPAK

Material Declaration**:

FERD30H100SB-TR

Package:

DPAK

Material Declaration**:

FERD30H100STS

Package:

TO-220AB

Material Declaration**:

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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FERD30H100SB-TR

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors

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