STPOWER SiC MOSFET is the innovative solution for a more compact and efficient design, ST is extending the benefits of new wide bandgap materials to mass production. A wide voltage range selection is available 650V, 1200V and 1700V. STPOWER SiC MOSFETs feature very low on-state resistance RDS(on) and are suitable for different applications automotive and industrial. STPOWER SiC MOSFET is a qualified automotive grade and it’s compliant to AEC-Q101 requirements.
Main characteristics:
- Very high temperature handling capability (max. TJ = 200 °C)
- Significantly reduced switching losses (minimal variation versus temperature)
- Low on-state resistance
- Simple to drive
- Very fast and robust intrinsic body
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