Product overview
Description
The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
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All features
- ESD protection
- Logic level input threshold
- High noise immunity
- Linear current limitation
- Short circuit protection
- Thermal shutdown
- Low current drawn from input pin
- Schmitt trigger on input
- Integrated clamp
Circuit Diagram
EDA Symbols, Footprints and 3D Models
STMicroelectronics - VND10N06
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Symbols
Footprints
3D models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| VND10N06TR-E | Active | DPAK | Automotive | Ecopack1 (*) |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VND10N06TR-E | | | distributors No availability of distributors reported, please contact our sales office |
VND10N06TR-E Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors