VNS3NV04DP-E

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OMNIFET II fully autoprotected Power MOSFET

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Product overview

Description

The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed using STMicroelectronics™ VIPower™ M0-3 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications.

Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring voltage at the input pin

  • All features

    • AEC-Q100 qualified
    • ECOPACK: lead free and RoHS compliant
    • Linear current limitation
    • Thermal shutdown
    • Short circuit protection
    • Integrated clamp
    • Low current drawn from input pin
    • Diagnostic feedback through input pin
    • ESD protection
    • Direct access to the gate of the Power MOSFET (analog driving)
    • Compatible with standard Power MOSFET

EDA Symbols, Footprints and 3D Models

STMicroelectronics - VNS3NV04DP-E

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
VNS3NV04DPTR-E
Active
SO-8 Automotive Ecopack2

VNS3NV04DPTR-E

Package:

SO-8

Material Declaration**:

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Marketing Status

Active

Package

SO-8

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors