STPSC10H12G2-TR

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1200V, 10A, silicon carbide power Schottky Diode

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Product overview

Description

This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.

The STPSC10H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

  • All features

    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • Robust high voltage periphery
    • Operating Tj from -40 °C to 175 °C
    • Low VF
    • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
    • ECOPACK2 compliant

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC10H12G2-TR

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STPSC10H12G2-TR
Active
H2PAK-2 Industrial Ecopack2

STPSC10H12G2-TR

Package:

H2PAK-2

Material Declaration**:

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Marketing Status

Active

Package

H2PAK-2

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STPSC10H12G2-TR
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STPSC10H12G2-TR

Junction Temperature (°C) (max):

175

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors