STPSC2006CW

NRND
Design Win

600 V power Schottky silicon-carbide diode

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Product overview

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

  • All features

    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • Particularly suitable in PFC boost diode function

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC2006CW

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STPSC2006CW
NRND
TO-247 Industrial Ecopack2

STPSC2006CW

Package:

TO-247

Material Declaration**:

Marketing Status

NRND

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STPSC2006CW
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STPSC2006CW NRND

Budgetary Price (US$)*/Qty:
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Package:
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RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

Part Number:

STPSC2006CW

Junction Temperature (°C) (max):

175

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors