STPSC2H065

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Design Win Education

650 V, 2 A High Surge Silicon Carbide Power Schottky Diode

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Product overview

Description

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC2H065 SiC diode will boost performance in hard switching conditions.

  • All features

    • No reverse recovery charge in application current range
    • Switching behavior independent of temperature
    • High forward surge capability
    • ECOPACK2 compliant component
    • Power efficient product

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC2H065

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STPSC2H065B-TR
Active
DPAK Industrial Ecopack2

STPSC2H065B-TR

Package:

DPAK

Material Declaration**:

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Marketing Status

Active

Package

DPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STPSC2H065B-TR
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STPSC2H065B-TR Active

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Part Number:

STPSC2H065B-TR

Junction Temperature (°C) (max):

175

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors