STPSC40065C

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650 V power Schottky silicon-carbide diode

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Product overview

Description

The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.

  • All features

    • No reverse recovery charge in application current range
    • Switching behavior independent of temperature
    • Dedicated to PFC applications
    • ECOPACK®2 compliant component

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC40065C

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STPSC40065CW
Active
TO-247 Industrial Ecopack2

STPSC40065CW

Package:

TO-247

Material Declaration**:

PDF XML

Marketing Status

Active

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STPSC40065CW
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STPSC40065CW Active

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Part Number:

STPSC40065CW

Operating Temperature (°C)

Min:

Max:

Junction Temperature (°C) (max):

175

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors