STTH12S06

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600 V, 12 A Turbo 2 Ultrafast Boost Diode

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Product overview

Description

ST's STTH12S06 is a state of the art Ultrafast recovery diode. By the use of 600 V Pt doping Planar technology, this diode will outperform the power factor correction circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH12S06, reduces significantly the switching power losses of the MOSFET, and thus increases the efficiency of the application. This allows designers to reduce the size of their heatsinks.

This device is also intended for applications in power supplies and power conversions systems, and other power switching applications.

  • All features

    • Insulated voltage: 1500 VRMS
    • Ultrafast recovery
    • Reduces losses in diode and switching transistor
    • Low reverse recovery current
    • Higher frequency operation
    • Low thermal resistance

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STTH12S06

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STTH12S06FP
Active
TO-220FPAC Industrial Ecopack2

STTH12S06FP

Package:

TO-220FPAC

Material Declaration**:

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Marketing Status

Active

Package

TO-220FPAC

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STTH12S06FP
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STTH12S06FP Active

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Part Number:

STTH12S06FP

Junction Temperature (°C) (max):

175

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors