Product overview
Description
The STDRIVEG610 is a high-speed, half-bridge gate driver optimized to drive high-voltage, enhanced mode, GaN HEMTs.
It features separated high current sink/source gate driving pins, integrated LDOs, undervoltage, bootstrap diode, high-side fast startup, overtemperature, fault and shutdown pins, and standby to fully support hard switching topologies in a 4x5mm QFN package.
The EVLSTDRIVEG610Q board is easy to use and quick and adapt for evaluating the characteristics of the STDRIVEG610 driving the SGT120R65AL 75 mΩ typ., 650 V E-Mode GaN switches in the 5x6 mm QFN package.
It provides an onboard programmable deadtime generator and a 3.3 V linear voltage regulator to supply external logic like microcontrollers.
Spare footprints are also included to allow customizing the board for the final application, such as separate LIN and HIN input signals or single PWM signal.
The EVLSTDRIVEG610Q is 56 x 70 mm wide, 2 layers, 1.5 Oz, FR-4 PCB, resulting in overall 24 °C/W Rth(J‑A) (equivalent to 48 °C/W for each GaN) in still air to evaluate high power applications.
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All features
- Half-bridge topology featuring the STDRIVEG610 GaN gate driver with integrated LDOs, separated sink/source, integrated bootstrap diode, standby
- Equipped with 75 mΩ typ., 650 V e-mode HEMT GaN
- Tunable hard-on and hard-off dV/dt
- 9 to 18 V (12 V typ.) VCC supply voltage
- Onboard adjustable deadtime generator to convert a single PWM signal in independent high-side and low-side inputs with deadtime
- Separated inputs with external deadtime can also be used
- External bootstrap diode to achieve minimum high side start-up time
- Footprint for optional additional high voltage bulk capacitor
- Onboard 3.3 V regulator for external circuitry supply
- RoHS compliant.
