GH50H65DWB2-7AG

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Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT featuring freewheeling SiC diode in an H2PAK-7 package

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Product overview

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.

Co-packed with the IGBT a silicon carbide diode has been adopted. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible.

The minimal capacitive turn-off behavior is independent of temperature. Based on technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC and LLC.

  • All features

    • AEC-Q101 qualified
    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • Low VCE(sat) = 1.6 V (typ.) @ IC = 50 A
    • Tight parameter distribution
    • Low thermal resistance
    • Positive VCE(sat) temperature coefficient
    • Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration
    • Excellent switching performance thanks to the extra driving kelvin pin

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STMicroelectronics - GH50H65DWB2-7AG

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
GH50H65DWB2-7AG
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Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT featuring freewheeling SiC diode in an H2PAK-7 package H2PAK-7 Automotive Ecopack1

GH50H65DWB2-7AG

Package:

Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT featuring freewheeling SiC diode in an H2PAK-7 package

Material Declaration**:

Marketing Status

Active

General Description

Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT featuring freewheeling SiC diode in an H2PAK-7 package

Package

H2PAK-7

Grade

Automotive

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT featuring freewheeling SiC diode in an H2PAK-7 package

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