Product overview
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performances are optimized both in conduction and switching energies for hard switching application. In this configuration, it has been co-packed with a high ruggedness rectifier diode targeting heavy duty and high reliability automotive applications.
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All features
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.6 V (typ.) @ IC = 75 A
- Co-packed with high ruggedness rectifier diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
EDA Symbols, Footprints and 3D Models
Quality and Reliability
Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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GWA75H65DRFB2AG | Active | Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package | TO-247 long leads | Automotive | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | General Description | |
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GWA75H65DRFB2AG | | | distributors No availability of distributors reported, please contact our sales office |
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GWA75H65DRFB2AG Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors