SCT040HU65G3AG

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Product overview

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3^rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

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AEC-Q101 qualified

Very low R_DS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency
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	Part number	Status	Description	Type	Supplier
Worldwide,Asia,Europe,Africa,North America,South America,Oceania,Afghanistan,Bahrain,Bangladesh,Bhutan,Brunei,Burma (Myanmar),Cambodia,China,East Timor,India,Indonesia,Iraq,Japan,Jordan,Kazakhstan,Kuwait,Kyrgyzstan,Laos,Malaysia,Maldives,Mongolia,Nepal,Oman,Pakistan,Philippines,Qatar,Russian Federation,Saudi Arabia,Singapore,South Korea,Sri Lanka,Taiwan,Tajikistan,Thailand,Turkmenistan,United Arab Emirates,Uzbekistan,Vietnam,Yemen,Albania,Andorra,Armenia,Austria,Azerbaijan,Belarus,Belgium,Bosnia and Herzegovina,Bulgaria,Croatia,Cyprus,Czech Republic,Denmark,Estonia,Finland,France,Georgia,Germany,Greece,Hungary,Iceland,Ireland,Israel,Italy,Latvia,Liechtenstein,Lithuania,Luxembourg,Macedonia,Malta,Moldova,Monaco,Montenegro,Netherlands,Norway,Poland,Portugal,Romania,San Marino,Serbia,Slovakia,Slovenia,Spain,Sweden,Switzerland,Turkey,Ukraine,United Kingdom,Vatican City,Algeria,Angola,Benin,Botswana,Burkina,Burundi,Cameroon,Cape Verde,Central African Republic,Chad,Comoros,Democratic Republic of Congo,Djibouti,Egypt,Equatorial Guinea,Eritrea,Ethiopia,Gabon,Gambia,Ghana,Guinea,Guinea-Bissau,Ivory Coast,Kenya,Lesotho,Liberia,Libya,Madagascar,Malawi,Mali,Mauritania,Mauritius,Morocco,Mozambique,Namibia,Niger,Nigeria,Rwanda,Sao Tome and Principe,Senegal,Seychelles,Sierra Leone,Somalia,South Africa,Swaziland,Tanzania,Togo,Tunisia,Uganda,Zambia,Zimbabwe,Antigua and Barbuda,Bahamas,Barbados,Belize,Canada,Costa Rica,Dominica,Dominican Republic,El Salvador,Grenada,Guatemala,Haiti,Honduras,Jamaica,Mexico,Nicaragua,Panama,Saint Kitts and Nevis,Saint Lucia,Saint Vincent and the Grenadines,Trinidad and Tobago,United States,Argentina,Bolivia,Brazil,Chile,Colombia,Ecuador,Guyana,Paraguay,Peru,Suriname,Uruguay,Venezuela,Australia,Fiji,Kiribati,Marshall Islands,Micronesia,Nauru,New Zealand,Palau,Papua New Guinea,Samoa,Solomon Islands,Tonga,Tuvalu,Vanuatu	STEVAL-7BIDIRCB	Active	7 kW bidirectional AC-DC converter for ESS and industrial charger, full SiC-based	Power supplies and converters	ST	STEVAL-7BIDIRCB Description: 7 kW bidirectional AC-DC converter for ESS and industrial charger, full SiC-based

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	Resource title	Version	Latest update
PDF	DS13940 Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an HU3PAK package	3.0	28 Nov 2023	28 Nov 2023 DS13940 Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an HU3PAK package 3.0

	Resource title	Version	Latest update
PDF	AN6280 Guideline and mounting instruction for STMicroelectronics STPAK sintering process	1.0	05 Mar 2025	05 Mar 2025 AN6280 Guideline and mounting instruction for STMicroelectronics STPAK sintering process 1.0
PDF	AN4671 How to fine tune your SiC MOSFET gate driver to minimize losses	1.1	13 Dec 2022	13 Dec 2022 AN4671 How to fine tune your SiC MOSFET gate driver to minimize losses 1.1
PDF	AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp	1.0	15 Jul 2019	15 Jul 2019 AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
PDF	AN3152 The right technology for solar converters	1.4	13 Sep 2018	13 Sep 2018 AN3152 The right technology for solar converters 1.4

	Resource title	Version	Latest update
PDF	TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs	2.2	06 Jul 2021	06 Jul 2021 TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
PDF	TN1378 HU3PAK package mounting and thermal behavior	2.0	01 Apr 2025	01 Apr 2025 TN1378 HU3PAK package mounting and thermal behavior 2.0
PDF	TN1224 Mounting instructions for SMD (surface mounting device) packages	2.4	11 Jul 2023	11 Jul 2023 TN1224 Mounting instructions for SMD (surface mounting device) packages 2.4
PDF	TN1225 Mounting instructions for THD (through-hole device) packages	2.0	23 Nov 2023	23 Nov 2023 TN1225 Mounting instructions for THD (through-hole device) packages 2.0

	Resource title	Version	Latest update
PDF	UM1575 Spice model tutorial for Power MOSFETs	1.3	21 Oct 2016	21 Oct 2016 UM1575 Spice model tutorial for Power MOSFETs 1.3

	Resource title	Version	Latest update
PDF	Bridgeless Totem Pole PFC with SCR Inrush Current Limiter	1.0	18 Nov 2020	18 Nov 2020 Bridgeless Totem Pole PFC with SCR Inrush Current Limiter 1.0
PDF	ST MOSFET Finder, the new app for Android and iOS	1.0	08 May 2020	08 May 2020 ST MOSFET Finder, the new app for Android and iOS 1.0
PDF	STPOWER Gen3 SiC MOSFETs	1.0	21 Mar 2023	21 Mar 2023 STPOWER Gen3 SiC MOSFETs 1.0
PDF	STPOWER Gen3 SiC MOSFETs IDEAL FOR EV	1.0	16 May 2024	16 May 2024 STPOWER Gen3 SiC MOSFETs IDEAL FOR EV 1.0
PDF	STPOWER Gen3 SiC MOSFETs industrial	1.0	21 May 2024	21 May 2024 STPOWER Gen3 SiC MOSFETs industrial 1.0
PDF	STPOWER SiC MOSFET : The real breakthrough in high-voltage switching	1.0	01 Feb 2021	01 Feb 2021 STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
PDF	STPOWER TRANSISTORS 7/10 years longevity commitment program	1.0	15 Oct 2020	15 Oct 2020 STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
PDF	SiC MOSFET, the real breakthrough in high-voltage switching	1.0	15 May 2020	15 May 2020 SiC MOSFET, the real breakthrough in high-voltage switching 1.0
PDF	SiC MOSFETs: The real breakthrough in high-voltage switching	3.0	01 Aug 2015	01 Aug 2015 SiC MOSFETs: The real breakthrough in high-voltage switching 3.0

	Resource title	Version	Latest update
PDF	3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices	1.0	23 Jul 2018	23 Jul 2018 3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
PDF	Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis	1.0	29 Apr 2021	29 Apr 2021 Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis 1.0
PDF	Cost benefits of a SiC MOSFET-based high frequency converter	1.0	01 Aug 2015	01 Aug 2015 Cost benefits of a SiC MOSFET-based high frequency converter 1.0
PDF	Design rules for paralleling of Silicon Carbide Power MOSFETs	1.0	25 Jul 2018	25 Jul 2018 Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
PDF	SiC and Silicon MOSFET solution for high frequency DC-AC converters	1.0	25 Jul 2018	25 Jul 2018 SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
PDF	Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films	1.0	23 Jul 2018	23 Jul 2018 Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
PDF	Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate	1.0	23 Jul 2018	23 Jul 2018 Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
PDF	Wide bandgap materials: revolution in automotive power electronics	1.0	23 Aug 2021	23 Aug 2021 Wide bandgap materials: revolution in automotive power electronics 1.0

EDA Symbols, Footprints and 3D Models

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	Resource title	Version	Latest update

SPICE models (1)

	Resource title	Version	Latest update
ZIP	SCT040HU65G3AG SPICE model	2.0	20 Apr 2023	20 Apr 2023 SCT040HU65G3AG SPICE model 2.0

Quality and Reliability

Part Number	Marketing Status	Package	Grade	RoHS Compliance Grade	Material Declaration**
SCT040HU65G3AG	Active	HU3PAK	Automotive	Ecopack1	PDF XML

SCT040HU65G3AG

Package:

HU3PAK

Material Declaration**:

PDF XML

More Info

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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RoHS

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ECCN (US)

ECCN (EU)

Operating Temperature (°C) (min)

Operating Temperature (°C) (max)

SCT040HU65G3AG

8.2 / 100

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Free Sample

Available at 4 distributors

Distributor availability of SCT040HU65G3AG

Distributor Name	Region	Stock	Min. Order	Third party link
Farnell Element14	EUROPE	138	1	Buy from Distributor
MOUSER	WORLDWIDE	367	1	Buy from Distributor
AVNET	AMERICA	600	0	Buy from Distributor
DIGIKEY	WORLDWIDE	570	1	Buy from Distributor

Distributor reported inventory date: 4/16/2025

HU3PAK

Tape and Reel

JAPAN

EAR99

NEC

Buy from Distributor

SCT040HU65G3AG Active

Budgetary Price (US$)*/Qty:

8.2 / 100

Available at 4 distributors

Buy Direct at ST

Add Free Sample

Package:

HU3PAK

Packing Type:

Tape and Reel

Country of Origin:

JAPAN

ECCN (US):

EAR99

ECCN (EU):

NEC

More Info

Swipe or click the button to explore more details Don't show this again

(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors

Product overview

Description

All features

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Solution evaluation tools

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Product Specifications (1)

Application Notes (4)

Technical Notes & Articles (4)

User Manuals (1)

Flyers (5 of 9)

Conference Papers (5 of 8)

EDA Symbols, Footprints and 3D Models

All resources

SPICE models (1)

Quality and Reliability

Sample & Buy

SCT040HU65G3AG

Product overview

Description

All features

You might also like...

Recommended for you

All tools & software

Solution evaluation tools

All resources

Product Specifications (1)

Application Notes (4)

Technical Notes & Articles (4)

User Manuals (1)

Flyers (5 of 9)

Conference Papers (5 of 8)

EDA Symbols, Footprints and 3D Models

All resources

SPICE models (1)

License Agreement

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