SCTHC250N120G3AG

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Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package

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Product overview

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

  • All features

    • AEC-Q101 qualified
    • Very low RDS(on) over the entire temperature range
    • High speed switching performances
    • Very fast and robust intrinsic body diode
    • Very high operating junction temperature capability (TJ = 200 °C)
    • Source sensing pin for increased efficiency
    • Low thermal resistance multi sintering package
    • 7.3 mm minimum creepage (including 0.6 mm particles)
    • 1020 Vrms PD2

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STMicroelectronics - SCTHC250N120G3AG

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCTHC250N120G3AG
Active
STPAK HC Automotive Ecopack2

SCTHC250N120G3AG

Package:

STPAK HC

Material Declaration**:

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Marketing Status

Active

Package

STPAK HC

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors