SCTL35N65G2V

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Design Win

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package

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Product overview

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

  • All features

    • Very fast and robust intrinsic body diode
    • Low capacitances
    • Source sensing pin for increased efficiency

EDA Symbols, Footprints and 3D Models

STMicroelectronics - SCTL35N65G2V

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCTL35N65G2V
Active
PowerFLAT 8x8 HV Industrial Ecopack2

SCTL35N65G2V

Package:

PowerFLAT 8x8 HV

Material Declaration**:

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Marketing Status

Active

Package

PowerFLAT 8x8 HV

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors