Product overview
Description
The SGT65R65AL is a 650 V, 25 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
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All features
- Enhancement mode normally off transistor
- Very high switching speed
- High power management capability
- Extremely low capacitances
- Kelvin source pad for optimum gate driving
- Zero reverse recovery charge
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - SGT65R65AL
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3D models
All resources
| Resource title | Version | Latest update |
|---|
SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 28 Feb 2023 | 28 Feb 2023 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| SGT65R65AL | Active | POWERFLAT 5X6 HV FOR POWERGAN | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| SGT65R65AL | | | distributors No availability of distributors reported, please contact our sales office | |||||||||||
SGT65R65AL Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors