ST13007

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Design Win

High voltage fast-switching NPN power transistor

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Product overview

Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

They use a Cellular Emitter structure to enhance switching speeds.

  • All features

    • FULLY CHARACTERIZED AT 125 °C
    • VERY HIGH SWITCHING SPEED
    • IMPROVED SPECIFICATION: LOWER LEAKAGE CURRENTTIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTIONTIGHTER STORAGE TIME RANGE
    • NPN TRANSISTOR
    • HIGH VOLTAGE CAPABILITY
    • MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
    • LARGE RBSOA
    • LOW SPREAD OF DYNAMIC PARAMETERS

EDA Symbols, Footprints and 3D Models

STMicroelectronics - ST13007

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
ST13007
Active
TO-220 Industrial Ecopack2

ST13007

Package:

TO-220

Material Declaration**:

PDF XML

Marketing Status

Active

Package

TO-220

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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ST13007
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ST13007 Active

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