Product overview
Description
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
-
All features
- Typical RDS(on)= 0.022 Ω
- Exceptional dv/dt capability
- 100% avalanche tested
- Standard threshold drive
Recommended for you
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STB45NF06
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models
