Product overview
Description
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STBV42G and STBV42G-AP are supplied using halogen-free molding compound.
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All features
- High voltage capability
- Very high switching speed
- Low spread of dynamic parameters
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STBV42
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