STD130N4F6

Obsolete
Design Win

Automotive-grade N-channel 40 V, 3 mOhm typ., 80 A STripFET F6 Power MOSFET in a DPAK package

Download datasheet

Product overview

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.

  • All features

    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STD130N4F6

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

Symbols

Footprints

Footprints

3D model

3D models