STD2HNK60Z-1

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Design Win

N-channel 600 V, 3.5 Ohm typ., 2 A SuperMESH Power MOSFET in an IPAK package

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Product overview

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

  • All features

    • 100% avalanche tested
    • Gate charge minimized
    • Very low intrinsic capacitance
    • Zener-protected

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STD2HNK60Z-1

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STD2HNK60Z-1
Active
IPAK Industrial Ecopack2

STD2HNK60Z-1

Package:

IPAK

Material Declaration**:

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Marketing Status

Active

Package

IPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STD2HNK60Z-1
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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors