Product overview
Description
This device is a dual NPN high voltage power transistor manufactured using multi-epitaxial planar technology. It is housed in a dual-island DIP-8 package, with separated terminals for a high degree of mounting flexibility.
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All features
- Low VCE(sat)
- Simplified circuit design
- Reduced component count
- Fast switching speed
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STD840DN40
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