Product overview
Description
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.
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All features
- Reduced switching losses
- Lower RDS(on) per area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
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ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.
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STMicroelectronics - STFH10N60M6
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All resources
| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | ||
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| ZIP | 1.0 | 14 Apr 2019 | 14 Apr 2019 |
