Product overview
Description
Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
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All features
- 100% avalanche tested
- High speed switching
- Intrinsic capacitances and Qg minimized
- Creepage distance path is 5.4 mm (typ.) for TO-3PF
- Fully isolated TO-3PF plastic packages
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STFW4N150
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STFW4N150 | Active | TO-3PF | Industrial | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STFW4N150 | | | distributors No availability of distributors reported, please contact our sales office |
STFW4N150 Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors