Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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All features
- Maximum junction temperature: TJ= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 2.1 V (typ.) @ IC = 40 A
- Positive VCE(sat) temperature coefficient
- 5 μs minimum short-circuit withstand time at TJ(sat) = 150 °C
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STG40H120F2D7
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Quality and Reliability
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
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| min | max | |||||||||||||
| STG40H120F2D7 | | | distributors No availability of distributors reported, please contact our sales office | |||||||||||
STG40H120F2D7 Active
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