Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
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All features
- Maximum junction temperature: TJ = 175 °C
- 10 μs of short-circuit withstand time
- Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STG50M120F3D7
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Quality and Reliability
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
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| min | max | |||||||||||||
| STG50M120F3D7 | | | distributors No availability of distributors reported, please contact our sales office | |||||||||||
STG50M120F3D7 Active
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