Product overview
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
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All features
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.55 V (typ.) @ IC = 75 A
- Minimized tail current
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STG75H65FB2D7
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Quality and Reliability
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STG75H65FB2D7 | | | distributors No availability of distributors reported, please contact our sales office |
STG75H65FB2D7 Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors