Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
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All features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 10 A
- Tight parameter distribution
- Safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Maximum junction temperature: TJ = 175 °C
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Part number Status Description Type Supplier Worldwide,Asia,Europe,Africa,North America,South America,Oceania,Afghanistan,Bahrain,Bangladesh,Bhutan,Brunei,Burma (Myanmar),Cambodia,China,East Timor,India,Indonesia,Iraq,Japan,Jordan,Kazakhstan,Kuwait,Kyrgyzstan,Laos,Malaysia,Maldives,Mongolia,Nepal,Oman,Pakistan,Philippines,Qatar,Russian Federation,Saudi Arabia,Singapore,South Korea,Sri Lanka,Taiwan,Tajikistan,Thailand,Turkmenistan,United Arab Emirates,Uzbekistan,Vietnam,Yemen,Albania,Andorra,Armenia,Austria,Azerbaijan,Belarus,Belgium,Bosnia and Herzegovina,Bulgaria,Croatia,Cyprus,Czech Republic,Denmark,Estonia,Finland,France,Georgia,Germany,Greece,Hungary,Iceland,Ireland,Israel,Italy,Latvia,Liechtenstein,Lithuania,Luxembourg,Macedonia,Malta,Moldova,Monaco,Montenegro,Netherlands,Norway,Poland,Portugal,Romania,San Marino,Serbia,Slovakia,Slovenia,Spain,Sweden,Switzerland,Turkey,Ukraine,United Kingdom,Vatican City,Algeria,Angola,Benin,Botswana,Burkina,Burundi,Cameroon,Cape Verde,Central African Republic,Chad,Comoros,Democratic Republic of Congo,Djibouti,Egypt,Equatorial Guinea,Eritrea,Ethiopia,Gabon,Gambia,Ghana,Guinea,Guinea-Bissau,Ivory Coast,Kenya,Lesotho,Liberia,Libya,Madagascar,Malawi,Mali,Mauritania,Mauritius,Morocco,Mozambique,Namibia,Niger,Nigeria,Rwanda,Sao Tome and Principe,Senegal,Seychelles,Sierra Leone,Somalia,South Africa,Swaziland,Tanzania,Togo,Tunisia,Uganda,Zambia,Zimbabwe,Antigua and Barbuda,Bahamas,Barbados,Belize,Canada,Costa Rica,Dominica,Dominican Republic,El Salvador,Grenada,Guatemala,Haiti,Honduras,Jamaica,Mexico,Nicaragua,Panama,Saint Kitts and Nevis,Saint Lucia,Saint Vincent and the Grenadines,Trinidad and Tobago,United States,Argentina,Bolivia,Brazil,Chile,Colombia,Ecuador,Guyana,Paraguay,Peru,Suriname,Uruguay,Venezuela,Australia,Fiji,Kiribati,Marshall Islands,Micronesia,Nauru,New Zealand,Palau,Papua New Guinea,Samoa,Solomon Islands,Tonga,Tuvalu,Vanuatu STPOWER IGBT Finder
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All resources
| Resource title | Version | Latest update |
|---|
Product Specifications (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 6.0 | 13 Apr 2017 | 13 Apr 2017 |
Application Notes (2)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 31 Oct 2024 | 31 Oct 2024 | ||
| 1.1 | 31 Oct 2024 | 31 Oct 2024 |
Technical Notes & Articles (3)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 19 Nov 2021 | 19 Nov 2021 | ||
| 2.4 | 11 Jul 2023 | 11 Jul 2023 | ||
| 2.0 | 23 Nov 2023 | 23 Nov 2023 |
Flyers (3)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 07 Jul 2020 | 07 Jul 2020 | ||
| 1.0 | 27 Jan 2023 | 27 Jan 2023 | ||
| 1.0 | 04 May 2020 | 04 May 2020 |
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGB10M65DF2
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| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGB10M65DF2 | Active | Trench gate field-stop IGBT M series, 650 V 10 A low loss | D2PAK | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | |||||||||||||||||||||
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| STGB10M65DF2 | Active | 1.5813 / 1k | Available at 2 distributors Distributor availability of STGB10M65DF2
Distributor reported inventory date: 3/27/2025 | | | | Buy from Distributor | | D2PAK | Tape and Reel | CHINA | EAR99 | NEC | -55 | 175 | Trench gate field-stop IGBT M series, 650 V 10 A low loss | ||||||||||||||||||
STGB10M65DF2 Active
Part Number:
STGB10M65DF2
Operating Temperature (°C)
Min:
-55
Max:
175
General Description:
Trench gate field-stop IGBT M series, 650 V 10 A low loss
Farnell Element14
Stock
258Min.Order
1DIGIKEY
Stock
100Min.Order
1Distributor reported inventory date: 3/27/2025
Stock
Min.Order
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors