Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.
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All features
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGB20H60DF
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGB20H60DF | Active | 600 V, 20 A high speed trench gate field-stop IGBT | D2PAK | Industrial | Ecopack2 | |
STGB20H60DF
Package:
600 V, 20 A high speed trench gate field-stop IGBTMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||||||||
| STGB20H60DF | | | distributors No availability of distributors reported, please contact our sales office |
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STGB20H60DF Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors