STGB5H60DF

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Trench gate field-stop IGBT, H series 600 V, 5 A high speed

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Product overview

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • High-speed switching
    • Tight parameter distribution
    • Safe paralleling
    • Low thermal resistance
    • Short-circuit rated
    • Ultrafast soft recovery antiparallel diode

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STMicroelectronics - STGB5H60DF

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGB5H60DF
Active
Trench gate field-stop IGBT, H series 600 V, 5 A high speed D2PAK Industrial Ecopack2

STGB5H60DF

Package:

Trench gate field-stop IGBT, H series 600 V, 5 A high speed

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop IGBT, H series 600 V, 5 A high speed

Package

D2PAK

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STGB5H60DF
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Trench gate field-stop IGBT, H series 600 V, 5 A high speed

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