STGB7H60DF

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Trench gate field-stop IGBT, H series 600 V, 7 A high speed

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.

  • All features

    • High speed switching
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance
    • Short-circuit rated
    • Ultrafast soft recovery antiparallel diode

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STMicroelectronics - STGB7H60DF

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGB7H60DF
Active
Trench gate field-stop IGBT, H series 600 V, 7 A high speed D2PAK Industrial Ecopack2

STGB7H60DF

Package:

Trench gate field-stop IGBT, H series 600 V, 7 A high speed

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop IGBT, H series 600 V, 7 A high speed

Package

D2PAK

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STGB7H60DF
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Trench gate field-stop IGBT, H series 600 V, 7 A high speed

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