STGD4H60DF

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Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A
    • Tight parameter distribution
    • Low thermal resistance
    • Short-circuit rated
    • Soft and fast recovery antiparallel diode

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STMicroelectronics - STGD4H60DF

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGD4H60DF
Active
Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package DPAK Industrial Ecopack2

STGD4H60DF

Package:

Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package

Material Declaration**:

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Marketing Status

Active

General Description

Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package

Package

DPAK

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package

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