Product overview
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
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All features
- Lower on voltage drop (VCE(sat))
- Very soft ultra fast recovery antiparallel diode
- Lower CRES / CIES ratio (no cross-conduction susceptibility)
- Short circuit withstand time 10µs
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGD8NC60KD
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGD8NC60KDT4 | Active | 8 A, 600 V short-circuit rugged IGBT | DPAK | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||||||||
| STGD8NC60KDT4 | | | distributors No availability of distributors reported, please contact our sales office |
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STGD8NC60KDT4 Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors