Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
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All features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 10 A
- Tight parameter distribution
- Safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Maximum junction temperature: TJ = 175 °C
All tools & software
All resources
| Resource title | Version | Latest update |
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Product Specifications (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 7.0 | 11 Apr 2017 | 11 Apr 2017 |
Application Notes (2)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 31 Oct 2024 | 31 Oct 2024 | ||
| 1.1 | 31 Oct 2024 | 31 Oct 2024 |
Technical Notes & Articles (3)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 19 Nov 2021 | 19 Nov 2021 | ||
| 2.4 | 11 Jul 2023 | 11 Jul 2023 | ||
| 2.0 | 23 Nov 2023 | 23 Nov 2023 |
Flyers (3)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 07 Jul 2020 | 07 Jul 2020 | ||
| 1.0 | 27 Jan 2023 | 27 Jan 2023 | ||
| 1.0 | 04 May 2020 | 04 May 2020 |
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGF10M65DF2
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Symbols
Footprints
3D models
All resources
| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 04 May 2016 | 04 May 2016 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGF10M65DF2 | Active | Trench gate field-stop IGBT M series, 650 V 10 A low loss | TO-220FP | Industrial | Ecopack2 | |
STGF10M65DF2
Package:
Trench gate field-stop IGBT M series, 650 V 10 A low lossMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||||||||
| STGF10M65DF2 | Active | 1.2104 / 1k | 1 distributors | TO-220FP | Tube | CHINA | EAR99 | NEC | -55 | 175 | Trench gate field-stop IGBT M series, 650 V 10 A low loss | ||||
STGF10M65DF2 Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors