STGW40H65FB

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Trench gate field-stop 650 V, 40 A high speed HB series IGBT

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Product overview

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A
    • Safe paralleling
    • Tight parameter distribution
    • Low thermal resistance

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STMicroelectronics - STGW40H65FB

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGW40H65FB
Active
Trench gate field-stop 650 V, 40 A high speed HB series IGBT TO-247 Industrial Ecopack2

STGW40H65FB

Package:

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

Package

TO-247

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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Trench gate field-stop 650 V, 40 A high speed HB series IGBT

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors