Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.
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All features
- Very high speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- 6 μs short-circuit withstand time
- Ultrafast soft recovery antiparallel diode
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGW60H65DRF
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