Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
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All features
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- 6 μs of minimum short circuit withstand time
- Low VCE(sat) = 1.7 V (typ.) @ IC = 30 A
- Tight parameter distribution
- Low thermal resistance
- Soft and very fast-recovery antiparallel diode
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGWA30M65DF2AG
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3D models
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGWA30M65DF2AG | Active | Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in a TO-247 long leads package | TO-247 long leads | Automotive | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||||||||
| STGWA30M65DF2AG | | | distributors No availability of distributors reported, please contact our sales office |
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STGWA30M65DF2AG Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors